| 摘要 |
<p>PROBLEM TO BE SOLVED: To expose a fine pattern exceeding a resolution limit of a resist. SOLUTION: A method for conducting multiple-exposures comprises the steps of mounting a first mask 33 having openings 33A, 33B, and so on, arranged at a pitch of a distance 2x on a photoresist layer 38, and subjecting to primary exposure. The method further comprises the steps of then executing a photoresist layer 38 on a second mask 34, arranged at a pitch of a distance 2x and deviated at a distance x to the openings 33A of the first mask 33, that is, one pitch on the photoresist layer 38, and secondary exposure. The method also comprises the steps of developing the layer 38 and forming a resist pattern, in which openings 40 are alternately formed at the openings of the first mask 33 and the openings of the second mask 34. In this case, the pitch of the resist patterns of the openings 40 becomes a distance x. Since it is x<=p<=2x for a resolution limit (p) of the resist, the pitch of the resist patterns can be set to the resolution limit or smaller.</p> |
