| 摘要 |
PROBLEM TO BE SOLVED: To reduce the dimensions of a horizontal transfer section in a solid- state image pickup device, and at the same time, to prevent time lag of the application of a voltage generated between a pair of transfer gate and accumulation gate electrodes. SOLUTION: Each transfer electrode at the horizontal transfer section of the solid-state image pickup device is constituted by the transfer and accumulation gate electrodes 18 and 14. The transfer and accumulation gate electrodes mutually come into contact for arranging on at least horizontal transfer section region. Merely the transfer gate electrode 18 is extended onto a field oxide film over the horizontal transfer section region, and a voltage application electrode is pulled out from the extended portion.
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