发明名称 SOURCE FOLLOWER CIRCUIT
摘要 PROBLEM TO BE SOLVED: To protect a P-channel FET for constituting a source follower circuit against a deterioration. SOLUTION: The P-channel FET 12 is arranged so as to receive a supply of an analog input voltage Vin between a gate terminal and a drain terminal and to supply the voltage between a source terminal and the drain terminal as an analog output voltage (output terminal voltage) Vout. In a power-down mode in which the output terminal voltage Vout is fixed to a voltage of a low potential power source GND by a circuit of a rear stage, a control signal Vcnt asserted to an 'H' level is given. An input switch 21 is opened in response to this control signal and a pull-down switch 22 is closed, and hence the gate terminal is fixed to a voltage of the low potential power source GND. The gate terminal becomes the same potential as that of a back gate terminal, and can prevent characteristic deterioration of the P-channel FET 12. In this case, a constitution in which the back gate terminal is fixed to a high potential in response to the control signal or a constitution in which the gate terminal and the back gate terminal are short circuited may be performed.
申请公布号 JP2002135066(A) 申请公布日期 2002.05.10
申请号 JP20000328464 申请日期 2000.10.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NOMAZAKI DAISUKE;IKOMA HEIJI
分类号 H03F3/72;H03F1/52;H03F3/50;(IPC1-7):H03F1/52 主分类号 H03F3/72
代理机构 代理人
主权项
地址