| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting device capable of driving at low voltage with high output and a small interval of light emitting points. SOLUTION: At least a first conductive clad layer 2, an active layer 3, second conductive clad layers 4 and 6, a second conductive contact layer 7, second conductive clad layers 8 and 10, an active layer 11, a first conductive clad layer 12, and a first conductive contact layer 13 are formed sequentially on a first conductive semiconductor substrate 1. The layers on the second conductive contact layer 7 corresponding to one part of the second conductive contact layer 7 are cut to expose the part of the second conductive contact layer 7. An electrode 16 is formed in the exposed region of the second conductive contact layer 7 while each electrode 17 or 15 is formed at the first conductive semiconductor substrate 1 and the first conductive contact layer 13.
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