| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of efficiently removing products of impurities adhering on a semiconductor film, while suppressing as much as possible the depletion of, e.g. semispherical grains formed on the semiconductor film containing the impurities. SOLUTION: Spherical or semispherical grains 18 are formed on an amorphous silicon film, containing phosphorous and constituting a lower electrode 17A of a capacitor. For suppressing the depletion of the electrode 17A, annealing process is carried out in a PH3 atmosphere, to cause the phosphorous in the grains 18 to be diffused. For removing the products of impurities adhering on the electrode 17A due to the annealing step, a cleaning step using warm water (pure water) is carried out. A spontaneous oxide film, formed on the surface of the electrode 17A, is removed by a cleaning process using a mixed solution of hydrofluoric acid and water. A dielectric film 20 and an upper electrode 21 are successively formed, so as to cover the surface of the electrode 17A, so that a cylindrical capacitor is fabricated. |
