| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device, capable of increasing the surface area of a lower electrode and forming a capacitive element which is minute and has proper capacitive characteristics. SOLUTION: An insulating film 2 and an amorphous silicon film 3 are formed on a semiconductor substrate 1. Thereafter, the film 3 after being subjected to HSG processing is changed, to have the grain size increased, thereby forming semispherical silicon crystal grains 3a, which are isolated like islands. Subsequently, the film 2 is etched to have a prescribed depth using the grains 3a as a mask to form, e.g. a base material insulating film 2a having groove parts 4 of 30 nm depth. Then, after forming a lower electrode 5, a capacitive insulating film 6 and an upper electrode 7 are formed. Thus, the capacitive element comprising the electrode 5, the film 6 and the electrode 7 can be formed. |
