| 摘要 |
PROBLEM TO BE SOLVED: To prevent deformations in a processed shape of an interlayer insulating film at the time of heat treatment in a manufacturing process of a semiconductor integrated circuit device having a BPSG film as the interlayer insulating film. SOLUTION: Holes are made in the BPSG film 23, silicon oxide films 22, 14 and a gate oxide film 7, and after having formed contact holes 26, 27 to reach an n-type semiconductor region 10 of an n-channel type MISFET Qn of a peripheral circuit and contact holes 28, 29 to reach a p-type semiconductor region 11 of a p-channel type MISFET Qp, the BPSG film 23 is annealed in an H2 added N2 atmosphere. |
