发明名称 CMOS IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a CMOS image sensor, capable of forming a convex color film pattern used as a microlens and of improving optical transmission characteristics, and to provide a method of manufacturing the CMOS image sensor. SOLUTION: The CMOS image sensor includes a semiconductor structure supplied by a series of processes, an insulating film 34 which is formed on the semiconductor structure and has a trench 35, and a convex color filter pattern 36A which is formed on the insulating film 34 and covers the trench 35.
申请公布号 JP2002134726(A) 申请公布日期 2002.05.10
申请号 JP20010217383 申请日期 2001.07.17
申请人 HYNIX SEMICONDUCTOR INC 发明人 KIN SAISEI
分类号 G02B5/20;G02B3/00;H01L21/00;H01L27/14;H01L27/146;H01L29/06;H01L31/0232;H01L31/062;H01L31/113;H04N5/335;H04N5/369;H04N5/374 主分类号 G02B5/20
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