发明名称 APPARATUS AND METHOD FOR PLASMA PROCESSING
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method for plasma processing, capable of preventing an abnormal electric discharging by preventing generation of impurities from the wall surface of a chamber, and stabilizing the plasma. SOLUTION: The apparatus 1 for plasma processing comprises the chamber, made of a conductor such as Al or the like for shutting off the internal atmosphere from the outside air, a bell-jar made of a quartz and covering the inner wall of the chamber, a plasma generating region of a part in the bell-jar, and an exposure/shield controller 9, capable of taking a state in which the conductor part is exposed with a part of the generating region and in a state which is shielded from the generating region at the conductor part by the insulator part. The method for plasma processing using the apparatus 1 is provided.
申请公布号 JP2002134482(A) 申请公布日期 2002.05.10
申请号 JP20000328358 申请日期 2000.10.27
申请人 SONY CORP 发明人 KISHIMOTO KIYOSHI
分类号 H05H1/46;C23F4/00;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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