| 摘要 |
PROBLEM TO BE SOLVED: To provide structure and process for reducing hot carrier injection. SOLUTION: A semiconductor device includes the layer of an insulating material, having more than one percent diffusible hydrogen formed therein. In one embodiment, the semiconductor device has a first layer of a monocrystalline silicon semiconductor material having a first surface. A second layer, formed along the first surface includes a silicon oxide. The interface between the first and second layers may have an interfacial trap density which is lower than 1010 cm-2 eV. The device may include a third layer comprising silicon nitride and at least 5 atom.% hydrogen. |
