发明名称 PATTERN FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide the formation method of a pattern for forming a fine resist pattern in the substrate surface with uniform dimensional accuracy, without having to increase manufacturing costs and treatment time. SOLUTION: In this pattern formation method, after a first resist pattern 2 containing a photoacid generator has been formed on a substrate 1 through lithographic method, a resist film 5 containing a crosslinking agent reaction to an acid is applied onto the substrate 1; and while the first resist pattern 2 is being covered, crosslinking reaction is generated on the interface between the first resist pattern 2 and resist film 5 for growing a crosslinking layer 7, and a second resist pattern 10 comprising the crosslinking layer 7 and first resist pattern 2 is formed. In this case, before the resist film 5 is applied onto the substrate 1, light 3 is applied to the first resist pattern 2.
申请公布号 JP2002134379(A) 申请公布日期 2002.05.10
申请号 JP20000318901 申请日期 2000.10.19
申请人 SONY CORP 发明人 TAKEUCHI KOICHI
分类号 G03F7/40;G03F7/00;G03F7/09;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;H01L21/312;H01L21/768;(IPC1-7):H01L21/027;H01L21/306 主分类号 G03F7/40
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