摘要 |
A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy. |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CARDUCCI, JAMES, D.;NOORBAKHSH, HAMID;LEE, EVANS, Y.;PU, BRYAN, Y.;SHAN, HONGQING;BJORKMAN, CLAES;SALIMIAN, SIAMAK;LUSCHER, PAUL, E.;WELCH, MICHAEL, D.;LIU, JINGBAO;KOMATSU, TAKEHIKO;DOAN, KENNY, L.;CHANG, MELODY;WANG, ZHUXU;KIM, YUNSANG;WANG, RUIPING |