| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that restrains consumption current effectively, caused by banding to band tunneling, without causing deterioration in circuit operation speed. SOLUTION: A NAND circuit is composed of a MOS transistor that turns to be off state, when a prescribed voltage difference is generated state between the gate and the drain at the mode of stand-by. And an N-type MOS transistor TN11 which is applied a measure against leak between the band to band is set at the drain side, by which the generation of the leak between the band to band is prevented, even when the N-type MOS transistor TN11 runs into the state to generate leakage between the band to band as the signal SCS changed into L level at the stand-by mode. |
