发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem that a consumption current due to a leak current is increased when a transistor is turned off even though a clock frequency and a power supply voltage are lowered in the case miniaturization proceeds in semiconductor working technology and threshold voltage of a transistor drops in a circuit according to scaling law. SOLUTION: This semiconductor integrated circuit device including a central processing unit and a plurality of peripheral function blocks, constitutes a 1st register group including at least a register defined by a program model included in the central processing unit and a part of the peripheral function block with a circuit comprising a transistor of a 1st threshold voltage, constitutes circuits other than the circuit with a circuit comprising a transistor of a 2nd threshold voltage whose voltage is lower than the 1st threshold voltage, and is also provided with a standby function that can independently control the power supply system of the circuit of the 2nd threshold voltage and a reset system for each of several partial circuits.</p>
申请公布号 JP2002132397(A) 申请公布日期 2002.05.10
申请号 JP20000328625 申请日期 2000.10.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIZUNO HIROSHI
分类号 G06F1/32;G06F1/24;G06F15/78;(IPC1-7):G06F1/32 主分类号 G06F1/32
代理机构 代理人
主权项
地址