| 摘要 |
PROBLEM TO BE SOLVED: To reduce through dislocation in an SOI layer and an interface defect, produced in the SOI layer at the interface between the SOI layer and an embedded oxide layer and to improve roughness on the surface of the embedded oxide layer. SOLUTION: A method of manufacturing an SOI substrate includes the steps of implanting oxygen ions of high concentration into a single-crystal silicon substrate, and then annealing the single-crystal silicon substrate, into which the oxygen ions are implanted at a temperature range of 1,300 to 1,420 deg.C for 10 to 35 hours, in a mixed gas atmosphere of argon and oxygen to make silicon react with oxygen to thereby form an embedded oxide layer in the silicon substrate.
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