| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which there is not a possibility of breakdown of an insulation film between a selection gate and a channel of a selection transistor and which can perform high speed read- out. SOLUTION: In an EEPROM consisting of NAND type cells to which plural memory cells are connected in series, high speed read-out can be performed by making control gate voltage Vread of a memory cell in a selection block selected by data read-out operation and voltage VSG1, VSG2 of a selection gate of a selection transistor in a selection block voltage being different respectively without occurrence of breakdown of an insulation film between the selection gate of the selection transistor and a channel section. In the same way, high speed read-out can be performed by making control gate voltage of a memory cell and selection gate voltage of the selection transistor different voltage also for DINOR, AND, NOR type cells and a NAND type cell to which one memory cell is connected.</p> |
