发明名称 SURFACE ACOUSTIC WAVE DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To increase a damping amount in a high frequency attenuation area, realize reduction in size and weight, enhance production efficiency, and realize a low price. SOLUTION: A surface acoustic wave device has a metallic lead frame formed with a plurality of inner leads 9 and mounts a chip 1 comprising at least one piezoelectric substrate to a resinous base 3 in which the lead frame is integrated. The surface acoustic wave device comprises a wire lead metal surface 7a formed by exposing a wire lead 7 which is electrically connected to an electrode of the chip by a bonding wire 4 from the resinous base, and a chip lead metal surface 10a formed by exposing a chip lead 10a part of which is coated with the chip out of an inner lead from the resinous base.
申请公布号 JP2002135080(A) 申请公布日期 2002.05.10
申请号 JP20000323977 申请日期 2000.10.24
申请人 NEC CORP 发明人 TSUDA TADAAKI;YAMAMOTO TAIJI;KAWAHARA HIROSHI;TAKAHASHI YOSHIHIRO;SAKAI MINORU
分类号 H03H9/25;H03H3/08;H03H9/00;H03H9/05;H03H9/145;(IPC1-7):H03H9/25 主分类号 H03H9/25
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