发明名称 SILICON CARBIDE SCHOTTKY DIODE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To eliminate the influence of micropipes, and to manufacture the silicon carbide rectifying element of a large area, using a silicon carbide substrate including the micropipe. SOLUTION: Ions whose conductivity type is opposite to that of a surface layer are injected into the surface near the part of the micropipes 17 and the peripheral region. They are heat-treated and a re-crystallized area 18 is formed, or the surface exposure part of the micropipes is covered by an insulation film.
申请公布号 JP2002134760(A) 申请公布日期 2002.05.10
申请号 JP20000320877 申请日期 2000.10.20
申请人 FUJI ELECTRIC CO LTD 发明人 OGINO SHINJI
分类号 H01L29/872;H01L29/47;(IPC1-7):H01L29/872 主分类号 H01L29/872
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