| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology which enables to reduce noise applied to a top layer interconnection, to make an area of a semiconductor integrated circuit smaller and to simplify a semiconductor process. SOLUTION: A BLM film Mb is formed on a silicon oxide film YZ and is electrically connected with the top layer interconnection (a third layer interconnection M3). A capacitance element C for noise reduction in the top layer interconnection consists of the BLM film Mb on which a bump electrode BP is formed, the silicon oxide film YZ and an aluminum film Ma under the silicon oxide film YZ.
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