| 摘要 |
A semiconductor device manufacturing method is obtained which is capable of depositing a ruthenium film with excellent homogeneity in the film quality and excellent reproducibility of the surface morphology. The semiconductor device manufacturing method of the present invention includes heating a silicon wafer up to a temperature of 290-350° C. by means of a heater, supplying an N2 gas to the reaction chamber thereby to hold the pressure in the reaction chamber at a level of 60-4,000 Pa, supplying to the reaction chamber a raw material gas containing ruthenium while decreasing the amount of supply of the N2 gas, thereby to hold the pressure in the reaction chamber at a level of 60-4,000 Pa, supplying to the reaction chamber an oxygen-containing gas containing oxygen after the amount of supply of the raw material gas becomes constant while decreasing the amount of supply of the N2 gas so as to hold the pressure in the reaction chamber at a level of 60-4,000 Pa, decreasing the amount of supply of the oxygen-containing gas after a ruthenium film is deposited, decreasing the amount of supply of the raw material gas so as to stop the supply of the oxygen-containing gas and the supply of the raw material gas, and increasing the amount of supply of the N2 gas thereby to hold the pressure in the reaction chamber at a level of 60-4,000 Pa.
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