SEMICONDUCTOR DEVICE WITH IMPROVED METAL INTERCONNECTION AND METHOD FOR FORMING THE METAL INTERCONNECTION

摘要

A semiconductor device having a metal interconnection structure, and a method of forming a corresponding semiconductor device having a metal interconnection. The semiconductor device includes an interlevel dielectric (ILD) film deposited over a semiconductor substrate. The semiconductor substrate includes gate electrodes thereon separated from each other by an equal distance, and includes junction areas located between the gate electrodes, and is subjected to polishing. A portion of the ILD film aligned with a gate electrode is etched to a depth to form a trench. An anti-short insulating layer is deposited on the ILD film and in the trench. The anti-short insulating layer and the ILD film are etched to form a via hole so as to expose a junction area. The trench and the via hole are filled with metal, thereby resulting in a completed metal interconnection.