| 发明名称 |
Thin film semiconductor device and production method for the same |
| 摘要 |
An amorphous semiconductor film having a thickness of 400 or more is formed on a=insulating surface and is wholly or selectively etched to form a region having a thickness of 300 or less. This is used as a channel-forming region in a TFT
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| 申请公布号 |
US2002055209(A1) |
申请公布日期 |
2002.05.09 |
| 申请号 |
US20010001819 |
申请日期 |
2001.12.05 |
| 申请人 |
KUSUMOTO NAOTO;TAKEMURA YASUHIKO;OHTANI HISASHI |
发明人 |
KUSUMOTO NAOTO;TAKEMURA YASUHIKO;OHTANI HISASHI |
| 分类号 |
C30B1/02;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/06;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
C30B1/02 |
| 代理机构 |
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