| 摘要 |
PROBLEM TO BE SOLVED: To obtain a silicon nitride sintered body which enables the densification and grain growth of a sintered body by a low temperature sintering of <=1900 deg.C, and has a high thermal conductivity of >=100 W/mK. SOLUTION: When a high thermal conductive silicon nitride sintered body is manufactured so that the densification and grain growth of a sintered body are enabled by low temperature sintering of <=1900 deg.C, the silicon nitride powder wherein the sintering agent which contains at least silicon nitride magnesium (MgSiN2) is added, is molded. Subsequently, sintering the silicon nitride powder at a temperature of <=1900 deg.C, the densely sintered body which has a high thermal conductivity of >=100 W/mK, is obtained. |
