| 摘要 |
Method for fabricating a semiconductor device for forming field oxide films on an isolation region of a plurality of active regions each having a long axis and a short axis, including the steps of forming first field oxidation mask layers on all active regions, forming a second field oxidation mask layer on an isolation region which isolates one active region and an adjacent active region in a long axis direction thereof, the second field oxidation mask layer connecting the first field oxidation mask layers, and conducting a field oxidation such that field oxide films grow at exposed portions and portion in contact with bottom sides of the second field oxidation mask layer to encroach into the bottom sides of the second field oxidation mask layer, to form a field oxide film on the exposed portions and on an entire portion of the bottom side of the second field oxidation mask layer.
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