| 发明名称 |
Semiconductor memory device having metal contact structure and method of manufacturing the same |
| 摘要 |
The present invention discloses a semiconductor memory device having a bit line and a metal contact stud, wherein the metal contact stud is formed on a different layer from a layer on which the bit lines are formed.
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| 申请公布号 |
US2002053686(A1) |
申请公布日期 |
2002.05.09 |
| 申请号 |
US20010838355 |
申请日期 |
2001.04.19 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SUH CHUNSUK |
| 分类号 |
H01L27/10;H01L21/768;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L21/82;G03C5/00;H01L23/48 |
主分类号 |
H01L27/10 |
| 代理机构 |
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| 主权项 |
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