发明名称 |
Low dielectric constant film having thermal resistance, process for forming the same, insulation film between semiconductor layer using the same, and semiconductor device |
摘要 |
There is provided a film, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances. The low dielectric constant film having thermal resistance comprises molecules comprising boron, nitrogen, and hydrogen, wherein the number of the nitrogen atom is 0.7 to 1.3 and the number of the hydrogen atom is 1.0 to 2.2 based on one boron atom, and of which dielectric constant is at most 3 2.4.
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申请公布号 |
US2002053653(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US20010941766 |
申请日期 |
2001.08.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUNODA SEI;NOBUTOKI HIDEHARU;MIKAMI NOBORU |
分类号 |
H01L21/31;C01B35/14;C23C16/38;H01B3/02;H01L21/312;H01L21/314;H01L21/318;H01L21/768;H01L23/522;(IPC1-7):H01B3/20;E04B1/74;H01L21/469;H01L29/00 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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地址 |
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