发明名称 Semiconductor device and method for producing the same
摘要 An interterminal anti-short-circuiting pattern is formed in an upper metal wire included in a connection terminal 3, for connecting to external driving LSI and the like, located on the projected portion of a bottom glass substrate 2. This pattern includes recess 4 and island 5 on which a contact hole 12a is formed through a protective insulating film. The protective insulating film has high residence to water penetration. Spread of the corrosion can be shut off by the recess surrounding the island. Short circuit occurrence due to interterminal current leak can be inhibited under high moisture conditions in the semiconductor device used for active matrix display, e.g. LCD panel.
申请公布号 US2002053667(A1) 申请公布日期 2002.05.09
申请号 US20010003550 申请日期 2001.10.24
申请人 FUJITA AKIRA;SUGITANI CHOEI 发明人 FUJITA AKIRA;SUGITANI CHOEI
分类号 G02F1/1345;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L23/538;H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L31/037;H01L31/20;G02F1/134 主分类号 G02F1/1345
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