发明名称 POSITIVE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive resist composition which is enhanced in resolving power, reduced in residue on development and improved in process admissibility such as a margin for exposure and a focal depth in lithography using a short- wavelength light source for exposure capable of ultra-microfabrication and a positive chemical amplification resist. SOLUTION: The positive resist composition contains (A) at least one of compound which generates a specific sulfonic acid by the irradiation of active light and (B) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkali developing solution.
申请公布号 JP2002131897(A) 申请公布日期 2002.05.09
申请号 JP20000321128 申请日期 2000.10.20
申请人 FUJI PHOTO FILM CO LTD 发明人 KODAMA KUNIHIKO;AOSO TOSHIAKI
分类号 G03F7/004;C07C309/06;C07C309/08;C07C309/10;C07C309/17;C07C381/12;C08K5/00;C08L101/02;C09K3/00;G03F7/039;H01L21/027 主分类号 G03F7/004
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