| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for far ultraviolet rays, particularly KrF eximer laser light, having improved line edge roughness, excellent sensitivity, resolution and focal depth and capable of reducing foreign substance on a resist pattern and decreasing standing wave. SOLUTION: The positive photoresist composition contains a compound (A) generating an acid by the irradiation with active ray or radial ray, a resin (B) made to be alkali soluble from insoluble or hardly soluble in alkali by the action of the acid and a nitrogen-containing compound (C) expressed by a specific structure. |
