发明名称 Wiring structure of semiconductor device
摘要 A wiring structure of a semiconductor device and a method for manufacturing the same are provided. The wiring structure according to the present invention includes a body formed of a first conductive material in a first insulating film on a semiconductor substrate and a protrusion formed of a second conductive material in a second insulating film formed on the first insulating film, connected to the upper surface of the body, formed to have a width less than that of the body, and having a planarized upper surface.
申请公布号 US2002053687(A1) 申请公布日期 2002.05.09
申请号 US20010006303 申请日期 2001.12.06
申请人 MOON JAE-HWAN;KIM GYU-CHUL 发明人 MOON JAE-HWAN;KIM GYU-CHUL
分类号 H01L21/3205;H01L21/28;H01L21/768;H01L21/8234;H01L21/8244;H01L27/11;(IPC1-7):H01L29/76;H01L29/94;H01L31/119 主分类号 H01L21/3205
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