发明名称 |
Wiring structure of semiconductor device |
摘要 |
A wiring structure of a semiconductor device and a method for manufacturing the same are provided. The wiring structure according to the present invention includes a body formed of a first conductive material in a first insulating film on a semiconductor substrate and a protrusion formed of a second conductive material in a second insulating film formed on the first insulating film, connected to the upper surface of the body, formed to have a width less than that of the body, and having a planarized upper surface.
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申请公布号 |
US2002053687(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US20010006303 |
申请日期 |
2001.12.06 |
申请人 |
MOON JAE-HWAN;KIM GYU-CHUL |
发明人 |
MOON JAE-HWAN;KIM GYU-CHUL |
分类号 |
H01L21/3205;H01L21/28;H01L21/768;H01L21/8234;H01L21/8244;H01L27/11;(IPC1-7):H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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