| 摘要 |
A semiconductor device capable of implementing a multilevel interconnection structure employing a tungsten plug after formation of a capacitor element including an oxide-based dielectric film by suppressing downward diffusion of hydrogen is obtained. This semiconductor device comprises a first interlayer dielectric film having a first opening, a first barrier film, formed at least along the inner side surface of the first opening, having a function of preventing diffusion of hydrogen, and a first conductive material embedded in the first opening through the first barrier film. Thus, the first barrier film functions as a barrier film preventing diffusion of hydrogen. Also when the tungsten plug is formed after formation of the capacitor element including the oxide-based dielectric film, therefore, the first barrier film can prevent hydrogen from diffusing into the oxide-based dielectric film.
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