发明名称 Electrostatic discharge protection device for an integrated transistor
摘要 A protection device includes a switching transistor (M11), connected between the gate of the output transistor (TS1) and ground, and a control circuit (CM), connected to the gate of the switching transistor (M11), which are capable of ensuring that the switching transistor (M11) is off when there is no electrostatic discharge at the drain of the output transistor (TS1) and capable of turning the switching transistor (M11) on when there is an electrostatic discharge at the drain of the output transistor (TS1).
申请公布号 US2002053934(A1) 申请公布日期 2002.05.09
申请号 US20010934452 申请日期 2001.08.21
申请人 STMICROELECTRONICS S.A. 发明人 SALOME PASCAL;MABBOUX GUY
分类号 H03K17/082;H03K17/16;H03K19/003;(IPC1-7):H03L5/00 主分类号 H03K17/082
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