| 摘要 |
PURPOSE: To provide a highly-reliable data storage device reduced in power consumption, and to provide a data read-out circuit and a data read-out method to be adopted into the device. CONSTITUTION: This data storage device which comprises a bit line BL, and a memory cell (ferroelectric capacitor CF) connected to the bit line BL is provided with a capacitor C5 for accumulating supplied electric charges, a negative voltage generating circuit 9 and a P-channel MOS transistor T2, Vth generating circuit 11 and a feedback circuit 13, by which the electric charges accumulated in the memory cell according to stored data and outputted to the bit line BL at the time of reading the data are transferred to the capacitor 5, a sense amplifier circuit 5 for amplifying the voltage generated from the electric charges accumulated in the capacitor C5 and reading the data stored in the memory cell.
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