发明名称 FILM FORMING METHOD BY SPUTTERING
摘要 PROBLEM TO BE SOLVED: To provide a film forming method by sputtering, which can stably form a uniform and homogeneous film on a substrate even in a long sputtering time. SOLUTION: The film forming method for forming the film on the substrate by sputtering while transferring the substrate includes, controlling a transferring speed of the above substrate to compensate a film forming speed, and controlling an applied electric power to a heating means for the substrate, so as not to destroy a thermal equilibrium state of heating temperature of the above substrate because of a change in the above transferring speed, at forming the film on the substrate.
申请公布号 JP2002129321(A) 申请公布日期 2002.05.09
申请号 JP20000323176 申请日期 2000.10.23
申请人 CANON INC 发明人 ECHIZEN YUTAKA;YAMASHITA TOSHIHIRO
分类号 C23C14/34;C23C14/00;C23C14/08;C23C14/54;C23C14/56;H01B13/00;(IPC1-7):C23C14/34 主分类号 C23C14/34
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