POLYCRYSTALLINE SILICON THIN-FILM-TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A polycrystalline silicon thin-film-transistor(TFT) is provided to effectively control a leakage current and to improve reliability by including an air cavity in the edge of a gate oxide layer, and to form the air cavity while using an isotropic etch process and a process for forming an interlayer dielectric using an atmospheric pressure chemical vapor deposition(APCVD) process by eliminating the need to use an additional mask process. CONSTITUTION: A polycrystalline silicon thin film is formed on a glass substrate on which an oxide layer is deposited. A gate insulation layer has the air cavity formed in the edge of a silicon oxide layer formed on the polycrystalline silicon thin film. A gate, a source and a drain are formed by an ion implantation process.