| 摘要 |
PURPOSE: A method for fabricating a bit line of a semiconductor device is provided to reduce contact resistance of a tungsten bit line and an elevated source/drain, by partially etching an epitaxial silicon layer of a source/drain as well as an interlayer dielectric in a bit line contact etch process. CONSTITUTION: A plurality of word lines(34) are formed on a semiconductor substrate(31). The source/drain(37) is formed in the semiconductor substrate between the word lines. The epitaxial silicon layer(38) is formed on the source/drain. The interlayer dielectric(39) is formed on the entire surface including the epitaxial silicon layer. A contact mask is formed on the interlayer dielectric. The interlayer dielectric is selectively etched by using the contact mask, and the epitaxial silicon layer is over-etched. A barrier metal is formed on the over-etched epitaxial silicon layer. A silicide layer is formed on the over-etched epitaxial silicon layer by a rapid thermal process. Bit line metal is formed on the barrier metal.
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