发明名称 |
Activation of word lines in semiconductor memory device |
摘要 |
To provide a technique for reducing the power consumption associated with word line activation in a semiconductor memory device. The semiconductor memory device is provided with a word line activation controller for controlling word line activation. Where consecutive operation cycles use multiple-bit addresses that include an identical row address, the word line activation controller maintains an activated state of a word line activated during an initial cycle of the consecutive cycles, without deactivating it until a final cycle of the consecutive cycles.
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申请公布号 |
US2002054523(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US20010976108 |
申请日期 |
2001.10.15 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
MIZUGAKI KOICHI;OTSUKA EITARO |
分类号 |
G11C11/407;G11C8/08;G11C11/401;G11C11/403;G11C11/406;G11C11/408;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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