发明名称 Activation of word lines in semiconductor memory device
摘要 To provide a technique for reducing the power consumption associated with word line activation in a semiconductor memory device. The semiconductor memory device is provided with a word line activation controller for controlling word line activation. Where consecutive operation cycles use multiple-bit addresses that include an identical row address, the word line activation controller maintains an activated state of a word line activated during an initial cycle of the consecutive cycles, without deactivating it until a final cycle of the consecutive cycles.
申请公布号 US2002054523(A1) 申请公布日期 2002.05.09
申请号 US20010976108 申请日期 2001.10.15
申请人 SEIKO EPSON CORPORATION 发明人 MIZUGAKI KOICHI;OTSUKA EITARO
分类号 G11C11/407;G11C8/08;G11C11/401;G11C11/403;G11C11/406;G11C11/408;(IPC1-7):G11C29/00 主分类号 G11C11/407
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