| 摘要 |
A cleaning method is provided for cleaning a semiconductor wafer. In this method, after removing adhering substances from the wafer by using a chemical liquid of organic amine type, there is carried out a pure-water cleaning capable of prevention of electrostatic destruction and alkaline corrosion on the wafer. In detail, it is executed to make a processing chamber have an atmosphere of carbon dioxide and subsequently introduce steam into the chamber to dissolve CO2-gas into the steam. Next, spray the pure water to the wafer. Then, the steam in which CO2-gas is dissolved dissolves in the pure water, so that the pure wafer becomes weak acid, accomplishing the reduction of resistivity of the pure water. Additionally, alkaline substances is neutralized by carbonated water to prevent an alkaline corrosion on a wiring layer on the wafer's surface.
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