发明名称 THRESHOLD VOLTAGE REFERENCED VOLTAGE SOURCE WITH REDUCED TEMPERATURE DEPENDENCY
摘要 PURPOSE: A threshold voltage referenced voltage source with reduced temperature dependency is provided, which increases an integration without additional operational amplifier and a start-up circuit and with low power consumption and a low temperature dependency and an insensitivity to a supply voltage variation. CONSTITUTION: The threshold voltage referenced voltage source circuit includes an output port(Vo2), a PMOS cascode current source(1000) and an active cascode current source(2000) to generate the first current(I11) and the second current(I12), an output transistor part(3000) to generate an output current(Io2) equal to the first current and the second current at the output port by forming a current mirror with the PMOS cascode current source, and a load resistor(R) connected between the output port and a ground voltage terminal. The active cascode current source includes the first NMOS transistor(M11) receiving the first current as a gate input and the second current as a drain input, the second NMOS transistor(M12) receiving the first current as a drain input and having a gate connected to a source of the first NMOS transistor and a source connected to a ground, and a PMOS transistor(M19) whose gate and source are connected to the ground and a drain is connected to the source of the second NMOS transistor.
申请公布号 KR20020034318(A) 申请公布日期 2002.05.09
申请号 KR20000064442 申请日期 2000.10.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, DONG UK
分类号 G05F1/46;(IPC1-7):G05F1/46 主分类号 G05F1/46
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