发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To transfer a designated pattern well even when an exposure light over the wavelength of 200 nm is used in an exposure process using a resist mask. SOLUTION: When the exposure process for a semiconductor wafer 1W is carried out using the exposure light over wavelength of 200 nm EXP, a photomask MR on which a shielding light pattern 5 made by laminating a resist film 4a on a light absorbents organic film 3a with light absorbent for the exposure light EXP is placed, is used. |
申请公布号 |
JP2002131886(A) |
申请公布日期 |
2002.05.09 |
申请号 |
JP20000328160 |
申请日期 |
2000.10.27 |
申请人 |
HITACHI LTD |
发明人 |
TANAKA TOSHIHIKO;HASEGAWA NORIO;MORI KAZUTAKA;MIYAZAKI HIROSHI;TERASAWA TSUNEO |
分类号 |
G03F1/54;G03F1/56;G03F1/58;G03F7/00;G03F7/20;G03F7/22;H01L21/027;H01L21/3205;H01L21/768 |
主分类号 |
G03F1/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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