| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor ion sensor which enables usage thereof stably over a long time, in the formation of an ion-sensitive film made of a thermoplastic polymer. SOLUTION: The semiconductor ion sensor has the ion-sensitive film 11 on the surface of a gate oxide film 4. The ion sensitive film 11 is formed out of a cross-linking thermoplastic polymer, containing a plasticizer and an ion sensitive component. The cross-linking of thermoplastic polymer is carried out to form a three-dimensional structure, thereby enabling prevention of the ion-sensitive film 11 from being torn or peeled off from the gate oxide film 4. |
