发明名称 FILM-FORMING COMPOSITION AND INSULATING FILM-FORMING MATERIAL
摘要 PROBLEM TO BE SOLVED: To obtain film-forming compositions which enable short-time firing and excel in crack resistance and can form silica based films reduced in the temperature dependence of the dielectric constant. SOLUTION: The film-forming compositions comprise (A) a condensate obtained by hydrolyzing and condensing one or more compounds selected from the group consisting of the compounds to be represented by formulae 1 to 3: (1) RaSi(OR1)4-a, (2) Si(OR2)4, and (3) R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6 (wherein R is H, F or a monovalent organic group; R1 to R6 are each a monovalent organic group; R7 is O, a phenylene group or -(CH2)n-; (a) is 1-2; (b) and (c) are each 0-2; (d) is 0 or 1; and (n) is 1-6) in the presence of an acid catalyst, (B) a nitrogen onium salt compound, and (C) a solvent to be represented by formula 4: (4) R15O(R17O)gR16 (wherein R15 and R16 are each H, a 1-4C alkyl group or a CH3CO-group; R17 is an alkylene group; and (g) is 1-2).
申请公布号 JP2002129103(A) 申请公布日期 2002.05.09
申请号 JP20000322607 申请日期 2000.10.23
申请人 JSR CORP 发明人 SHINODA TOMOTAKA;SUGIURA MAKOTO;SHIODA ATSUSHI;YAMADA KINJI
分类号 C09D183/04;C09D183/02;C09D183/14;H01L21/312;H01L21/316;(IPC1-7):C09D183/04 主分类号 C09D183/04
代理机构 代理人
主权项
地址