METHOD FOR FORMING METAL OXIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a uniform metal-oxide thin film, particularly a transparent electroconductive film with low resistance, in a low temperature without heating, while preventing a base material from damaging or a quality of the film from deteriorating. SOLUTION: The method for forming the metal oxide thin film is characterized by sputtering at a base material temperature of 100 deg.C or less with a magnetron sputtering apparatus in which a target is arranged aslant so that sputtered particles can be launched in an angle of 75 degree or less against the base material.