DIELECTRIC STRUCTURE AND METHOD FOR MINIMIZING EROSION DURING CHEMICAL MECHANICAL POLISHING OF METALS

摘要

A dielectric layer (110), such as an interlevel dielectric ILD or PMD, comprising a doped silicate glass layer (112) with an overlying CMP stopping layer (114). The CMP stopping layer (114) comprises a dielectric such as an undoped oxide. The CMP stopping layer (114) is resistant to dielectric erosion during a subsequent metal CMP step.