发明名称 |
METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to reduce impurities remaining on a lower electrode or in a high dielectric layer, by performing an ozone or plasma annealing process as a pre-treatment process after the lower electrode is formed or by performing an ozone or plasma annealing process as a post-treatment process after the high dielectric layer is formed. CONSTITUTION: The lower electrode is formed on a semiconductor substrate(1). A pre-treatment process is performed regarding the lower electrode. A dielectric layer is formed on the lower electrode. The dielectric layer is annealed in an atmosphere of an oxygen radical or plasma, and a post-treatment process is performed. An upper electrode is formed on the post-treated dielectric layer. The pre-treatment process, the process for forming the dielectric layer and the post-treatment process are performed in the same chamber.
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申请公布号 |
KR20020035080(A) |
申请公布日期 |
2002.05.09 |
申请号 |
KR20020021685 |
申请日期 |
2002.04.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, DU SEOP;KANG, CHANG SEOK;PARK, HONG BAE;PARK, YEONG UK;YOO, CHA YEONG |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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