| 摘要 |
PURPOSE: A method for fabricating a charge coupled device(CCD) is provided to easily fabricate a three poly gate structure and to improve reliability of a breakdown voltage among the first, second and third polysilicon layers, by eliminating the need to use equipment having high etch selectivity of a polysilicon layer and a nitride layer. CONSTITUTION: A gate insulation layer is formed on a semiconductor substrate(30). The first gate is formed on the gate insulation layer. An oxide layer covering the second gate is formed. The first nitride layer is formed on the resultant structure. The second gate is formed on the first nitride layer, wherein one end of the second gate comes in contact with the first gate and the other end comes in contact with the first nitride layer. An oxide layer covering the second gate is formed. The second nitride layer is formed on the resultant structure. The third gate is formed on the second nitride layer, wherein a part of the third gate comes in contact with the first gate, the second gate and the second nitride layer.
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