发明名称 METHOD AND APPARATUS FOR FORMING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming a thin film, which accurately control a substrate temperature giving a big influence on performance of a formed thin film at a predetermined value, and are suitable for mass production with a little performance variation. SOLUTION: A material supplying part for thin film consisting of a material for thin film and a hearth for supporting it comprises having a mechanism for cooling on a basis of flowing a cooling fluid, in the hearth, detecting a fluid temperature (Tin) of the cooling fluid in front of the hearth and a fluid temperature (Tout) at an exit, and controlling a substrate temperature during formation of the thin film at the predetermined temperature, by sending a temperature signal based on the difference of the temperature Tout and Tin to a substrate heating apparatus, to form the thin film with a constant performance.
申请公布号 JP2002129327(A) 申请公布日期 2002.05.09
申请号 JP20000325294 申请日期 2000.10.25
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KODERA KOICHI;SHIOKAWA AKIRA;MIYASHITA KANAKO
分类号 C23C14/54;C23C14/24;C23C14/50;(IPC1-7):C23C14/54 主分类号 C23C14/54
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