发明名称 |
Protection circuit device using MOSFETS and a method of manfacturing the same |
摘要 |
A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.
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申请公布号 |
US2002053744(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US20010809856 |
申请日期 |
2001.03.16 |
申请人 |
SAKAMOTO NORIAKI;KOBAYASHI YOSHIYUKI;FUKUDA HIROKAZU;ETOU HIROKI;TAKAHASHI KOUJI |
发明人 |
SAKAMOTO NORIAKI;KOBAYASHI YOSHIYUKI;FUKUDA HIROKAZU;ETOU HIROKI;TAKAHASHI KOUJI |
分类号 |
H01L27/04;H01L21/48;H01L21/822;H01L23/31;H01L23/49;H01L23/58;H01L29/78;(IPC1-7):H01L23/48 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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