发明名称 Protection circuit device using MOSFETS and a method of manfacturing the same
摘要 A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.
申请公布号 US2002053744(A1) 申请公布日期 2002.05.09
申请号 US20010809856 申请日期 2001.03.16
申请人 SAKAMOTO NORIAKI;KOBAYASHI YOSHIYUKI;FUKUDA HIROKAZU;ETOU HIROKI;TAKAHASHI KOUJI 发明人 SAKAMOTO NORIAKI;KOBAYASHI YOSHIYUKI;FUKUDA HIROKAZU;ETOU HIROKI;TAKAHASHI KOUJI
分类号 H01L27/04;H01L21/48;H01L21/822;H01L23/31;H01L23/49;H01L23/58;H01L29/78;(IPC1-7):H01L23/48 主分类号 H01L27/04
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