发明名称 |
Zinc oxide films containing p-type dopant and process for preparing same |
摘要 |
A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
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申请公布号 |
US2002055003(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US20010002790 |
申请日期 |
2001.11.15 |
申请人 |
THE CURATORS OF THE UNIVERSITY OF MISSOURI |
发明人 |
WHITE HENRY W.;ZHU SHEN;RYU YUNGRYEL |
分类号 |
H01L29/22;C23C14/08;C23C14/28;C30B23/02;H01L21/203;H01L21/22;H01L21/225;H01L21/363;H01L21/385;H01L31/0296;H01L31/10;H01L31/18;H01L33/00;H01L33/28;H01S5/327;(IPC1-7):B32B9/00;B32B15/04 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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