发明名称 |
Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device |
摘要 |
The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as -60° C. or less. Then the Si substrate is heated to recover the implantation defects caused by the ion-implantation. Such a combination of the low temperature ion-implantation and the annealing processes is repeated as required.
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申请公布号 |
US2002053645(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US20020036453 |
申请日期 |
2002.01.07 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGURO KYOICHI;OKUMURA KATSUYA |
分类号 |
H01J37/317;H01L21/265;H01L21/324;(IPC1-7):G21G5/00 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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